Journal of Science and Geosciences

Extreme ultraviolet lithography

Abstract


Abiodun Musa

EUV (Extreme Ultraviolet) lithography uses an EUV light of the extremely short wavelength of 13.5 nm. It allows exposure of fine circuit patterns with a half-pitch below 20 nm that cannot be exposed by the conventional optical lithography using an ArF excimer laser. Putting it into practical use requires a variety of element technologies, including the light source, optics, masks, photoresist, and lithography tools.

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