Abstract

Abiodun Musa

EUV (Extreme Ultraviolet) lithography uses an EUV light of the extremely short wavelength of 13.5 nm. It allows exposure of fine circuit patterns with a half-pitch below 20 nm that cannot be exposed by the conventional optical lithography using an ArF excimer laser. Putting it into practical use requires a variety of element technologies, including the light source, optics, masks, photoresist, and lithography tools.