Annals of Educational Research and Reviews

A precise mathematical model for charge thickness in ballistic carbon nanotube field impact semiconductors (CNTFETs)


Liu Xiaokuo Wen

Since the discovery of carbon nanotube (CNT), a great deal of groups pays more attention to it due to its unique
properties. The theory of ballistic transport carbon nanotube field effect transistors (CNTFETs) is presented in the
paper, and then a numerical model based on Newton-Raphson and linear approximation method for charge
densities in CNTFET is proposed. The model could efficiently provide accurate solution to the self-consistent
potential in a CNTFET, which is a function of parameters such as terminal voltages, CNT diameter, and Fermi
level and so on. The model is simulated and the results show that compared with the piece-wise linear
approximation, the numerical model in the paper is more accurate and efficient.


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